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| SMBT5087 PNP Silicon Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15kHz 3 Type SMBT5087 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS = 71 C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 240 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2 1 VPS05161 Marking s2Q Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 50 50 3 50 330 150 -65 ... 150 Unit V mA mW C Nov-30-2001 SMBT5087 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector -base cutoff current VCB = 10 V, IE = 0 VCB = 35 V, IE = 0 VCB = 35 V, IE = 0 , TA = 150 C DC current gain1) IC = 100 A, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA Base emitter saturation voltage-1) IC = 10 mA, IB = 1 mA AC Characteristics Transition frequency IC = 0.5 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Short-circuit forward current transf. ratio IC = 1 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 100 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 3 k IC = 2 mA, VCE = 5 V, f = 10HZ to 15kHz , RS = 10 k 1Puls test: t 300s, D = 2% Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 50 3 - - V hFE 250 250 250 VCEsat VBEsat - - 10 50 20 nA nA A - - 800 0.3 0.85 V fT Ccb h21e F 40 250 - 4 900 MHz pF dB - - 2 2 2 Nov-30-2001 SMBT5087 Total power dissipation Ptot = (TS ) Collector-base capacitance CCB = Emitter-base capacitance CEB= f = 1MHz 400 mW (VCB0) 12 CCB0 (C EB0) pF 10 SMBT 5086/87 300 Ptot 8 250 C EBO 6 CCBO 200 150 4 100 2 50 0 0 20 40 60 80 100 120 C 150 0 10 -1 5 10 0 TS V 10 1 VCB0 , (VEB0 ) 10 3 Ptot max 5 Ptot DC SMBT 5086/87 10 2 5 10 1 5 10 0 10 -6 10 -5 Ptotmax/PtotDC = (tp) EHP00785 VCE = 5 V 10 3 MHz fT 5 T SMBT 5086/87 D= tp T tp D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 -1 5 10 0 5 10 1 3 Permissible Pulse Load Transition frequency fT = (IC ) EHP00786 Nov-30-2001 (VEB0) EHP00784 mA 10 2 C SMBT5087 Base-emitter saturation voltage 5 0 Collector-emitter saturation voltage IC = (VCEsat), hFE = 40 EHP00787 10 2 mA SMBTA 5086/87 10 2 C 100 C 25 C -50 C 10 1 5 C mA 10 1 5 10 0 5 10 0 5 10 -2 10 -1 0 0.2 0.4 0.6 0.8 V V BEsat 1.2 10 -1 VCE = 1 V EHP00789 10 2 mA SMBT 5086/87 10 3 h FE 5 SMBT 5086/87 C 10 1 100 C 25 C 10 2 -50 C 5 10 5 10 1 10 -1 5 100 C 25 C -50 C 5 10 -2 0 0.5 V V BE 1.0 10 0 10 -2 10 -1 10 0 4 Collector current IC = (VBE) VCE = 1V DC current gain hFE = IC = (VBEsat ), hFE = 40 SMBT 5086/87 EHP00788 100 C 25 C -50 C 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat (IC) EHP00790 10 1 mA 10 2 C Nov-30-2001 SMBT5087 Collector cutoff current ICBO = VCB = 30 V 10 4 nA SMBT 5086/87 IC = 0.2mA, RS = 2k , f = 1kHz EHP00791 SMBT 5086/87 EHP00792 20 CBO 10 3 F dB 15 10 2 max 10 10 1 10 0 typ 5 10 -1 0 50 100 TA C 150 0 10 -1 10 0 IC = 0.2mA, VCE = 5V, RS = 2 k 20 SMBT 5086/87 EHP00793 VCE = 5V, f = 120Hz 20 SMBT 5086/87 EHP00794 F dB 15 F dB 15 R S = 1 M 100 k 10 k 10 10 500 5 5 1 k 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 0 10 -3 10 -2 5 Noise figure F = (f) Noise figure F = (TA) Noise figure F = (VCE) 10 1 V 10 2 V CE (IC ) 10 -1 10 0 mA 10 1 C Nov-30-2001 SMBT5087 Noise figure F = VCE = 5V, f = 1kHz 20 SMBT 5086/87 VCE = 5V, f = 10kHz EHP00795 20 SMBT 5086/87 F dB 15 F R S = 1 M 100 k 10 k dB 15 R S = 1 M 100 k 10 1 k 10 500 5 500 5 1 k 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10 -3 10 -2 C 6 (IC ) Noise figure F = (IC ) EHP00796 10 k 10 -1 10 0 mA 10 1 C Nov-30-2001 |
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